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CYStech Electronics Corp. High Voltage NPN Epitaxial Planar Transistor Spec. No. : C210M3 Issued Date : 2003.05.15 Revised Date :2005.10.21 Page No. : 1/5 BTC4505M3 Features * High breakdown voltage. (BVCEO =400V) * Low saturation voltage, typically VCE(sat) =0.1V at IC/IB=10mA/1mA. * Complementary to BTA1759M3 * Pb-free package Symbol BTC4505M3 Outline SOT-89 BBase CCollector EEmitter BCE Absolute Maximum Ratings (Ta=25C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Pd Tj Tstg Limit 400 400 6 300 600 150 -55~+150 Unit V V V mA mW C C BTC4505M3 CYStek Product Specification CYStech Electronics Corp. Characteristics (Ta=25C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat) hFE fT Cob Min. 400 400 6 82 Typ. 0.1 20 7 Max. 10 10 0.5 1.5 270 Unit V V V A A V V MHz pF Spec. No. : C210M3 Issued Date : 2003.05.15 Revised Date :2005.10.21 Page No. : 2/5 Test Conditions IC=50A, IE=0 IC=1mA, IB=0 IE=50A, IC=0 VCB=400V, IE=0 VEB=6V, IC=0 IC=10mA, IB=1mA IC=10mA, IB=1mA VCE=10V, IC=10mA VCE=10V, IC=10mA, f=100MHz VCB=10V, f=1MHz *Pulse Test : Pulse Width 380s, Duty Cycle2% Ordering Information Device BTC4505M3 Package SOT-89 (Pb-free ) Shipping 1000 pcs / Tape & Reel BTC4505M3 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves Current Gain vs Collector Current 1000 HFE@VCE=10V Current Gain---HFE Spec. No. : C210M3 Issued Date : 2003.05.15 Revised Date :2005.10.21 Page No. : 3/5 Saturation Voltage vs Collector Current 10000 Saturation Voltage-(mV) VCESAT@IC=10IB 1000 100 100 10 0.1 1 10 100 1000 Collector Current ---IC(mA) 10 0.1 1 10 100 1000 Collector Current ---IC(mA) Saturation Voltage vs Collector Current 10000 Saturation Voltage-(mV) Power Dissipation---PD(mW) 700 600 Power Derating Curve VBESAT@IC=10IB 500 400 300 200 100 0 1000 100 0.1 1 10 100 1000 Collector Current--- IC(mA) 0 50 100 150 200 Ambient Temperature---TA( ) BTC4505M3 CYStek Product Specification CYStech Electronics Corp. Reel Dimension Spec. No. : C210M3 Issued Date : 2003.05.15 Revised Date :2005.10.21 Page No. : 4/5 Carrier Tape Dimension BTC4505M3 CYStek Product Specification CYStech Electronics Corp. SOT-89 Dimension A Spec. No. : C210M3 Issued Date : 2003.05.15 Revised Date :2005.10.21 Page No. : 5/5 Marking: 1 2 C 3 H 3D B D E F G I Style: Pin 1. Base 2. Collector 3. Emitter 3-Lead SOT-89 Plastic Surface Mounted Package *: Typical DIM A B C D E Inches Min. Max. 0.1732 0.1811 0.1594 0.1673 0.0591 0.0663 0.0945 0.1024 0.01417 0.0201 Millimeters Min. Max. 4.40 4.60 4.05 4.25 1.50 1.70 2.40 2.60 0.36 0.51 DIM F G H I Inches Min. Max. 0.0583 0.0598 0.1165 0.1197 0.0551 0.0630 0.0138 0.0161 Millimeters Min. Max. 1.48 1.527 2.96 3.04 1.40 1.60 0.35 0.41 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: * Lead: 42 Alloy ; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: * All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. * CYStek reserves the right to make changes to its products without notice. * CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTC4505M3 CYStek Product Specification |
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